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| PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 PACKAGE DIMENSIONS 0.175 (4.44) 0.087 (2.22) O 0.065 (1.65) QSE114 0.050 (1.27) 0.200 (5.08) O 0.095 (2.41) 0.500 (12.70) MIN EMITTER COLLECTOR 0.020 (0.51) SQ. (2X) SCHEMATIC Collector 0.100 (2.54) 0.030 (0.76) 0.100 (2.54) NOM NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. Emitter DESCRIPTION The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package. FEATURES * * * * * * * NPN silicon phototransistor Package type: Sidelooker Medium wide reception angle, 50 Package material and color: black epoxy Matched emitter: QEE113 Daylight filter High sensitivity (c) 2002 Fairchild Semiconductor Corporation Page 1 of 4 5/1/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit C C C C V V mW QSE114 Soldering Temperature (Flow)(2,3) Collector Emitter Voltage Emitter Collector Voltage Power Dissipation(1) NOTES: 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. 5. = 880 nm (AlGaAs). ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25C unless otherwise specified) Parameter Peak Sensitivity Reception Angle Collector Emitter Dark Current Collector-Emitter Breakdown Emitter-Collector Breakdown On-State Collector QSE113 Current(5) VCE = 10 V, Ee = 0 IC = 1 mA IE = 100 A Ee = 0.5 mW/cm2, VCE = 5 V Ee = 0.5 mW/cm2, VCE = 5 V Ee = 0.5 mW/cm2, IC = 0.1 mA IC = 1mA, VCC = 5V, RL = 100 Test Conditions Symbol PS ICEO BVCEO BVECO IC(ON) IC(ON) VCE(SAT) tr tf Min -- -- -- 30 5 0.25 1.00 -- -- -- Typ 880 25 -- -- -- -- -- -- 8 8 Max -- -- 100 -- -- 1.50 -- 0.4 -- -- Units nM Deg. nA V V mA mA V s s On-State Collector Current(5) QSE114 Saturation Voltage(5) Rise Time Fall Time (c) 2002 Fairchild Semiconductor Corporation Page 2 of 4 5/1/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 Figure 1. Light Current vs. Radiant Intensity 101 VCE = 5V GaAs Light Source QSE114 Figure 2. Angular Response Curve 110 120 130 140 100 90 80 70 60 50 40 30 20 10 0 1.0 I C(ON) - Light Current (mA) 100 150 160 170 180 1.0 1 10-1 0.1 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 Ee - Radiant Intensity (mW/cm ) 2 Figure 3. Dark Current vs. Collector - Emitter Voltage 101 101 Figure 4. Light Current vs. Collector - Emitter Voltage Ie = 1mW/cm 2 I CEO - Dark Current (nA) 100 I L - Normalized Light Current 100 Ie = 0.5mW/cm 2 Ie = 0.2mW/cm 2 Ie = 0.1mW/cm 2 10-1 10-1 Normalized to: VCE = 5V Ie = 0.5mW/cm 2 TA = 25C 10-2 0.1 10-2 10-3 0 5 10 15 20 25 30 1 10 VCE - Collector-Emitter Voltage (V) VCE - Collector-Emitter Voltage (V) Figure 5. Dark Current vs. Ambient Temperature 104 Normalized to: VCE = 25V I CEO - Normalized Dark Current 103 TA = 25C VCE = 25V VCE = 10V 102 101 100 10-1 25 50 75 100 TA - Ambient Temperature ( C) (c) 2002 Fairchild Semiconductor Corporation Page 3 of 4 5/1/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 QSE114 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. (c) 2002 Fairchild Semiconductor Corporation Page 4 of 4 5/1/02 |
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